
IGBT Modules
Bipolar transistor with insulated gate electrode
In modern power electronics, IGBTs (insulated gate bipolar transistor modules) play a central role as discrete components wherever efficient switching and control of high electrical currents and voltages is required. With their three connections - emitter, collector and gate - they offer the advantages of both MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and bipolar transistors.
Great importance of IGBTs for high efficiency requirements
Thanks to their high switching speed, low power losses and robust design, IGBTs are considered indispensable in a wide range of applications - from the automotive industry and renewable energy systems to industrial drives and household appliances.
- Inverters for electric drives
- 3-phase motor controls
- Battery charging systems
- Resonant circuits (e.g. induction cooker)
- Solar and wind power systems
- Electroplating, welding equipment
- UPS etc.
Discrete IGBTs vs IGBT modules
While discrete IGBTs are sufficient in many standard applications, complex and powerful systems often require greater integration and reliability. This is where IGBT modules come into play. These modules combine several IGBTs and often also freewheeling diodes in a single housing that has been specially developed for optimised heat dissipation and mechanical stability. By integrating several components in one module, the overall dimensions can be reduced, reliability increased and assembly simplified.
The most important advantages of IGBT modules
- Improved heat dissipation: By sharing a heat sink and optimising the arrangement of the components, IGBT modules can dissipate heat more efficiently, resulting in greater reliability and power density.
- Increased reliability: The integrated circuit and the use of highquality materials reduce the risk of faults caused by external influences such as mechanical vibrations or electromagnetic interference.
- Simplified assembly and maintenance: By combining several components in one module, the assembly time is shortened and the complexity of the circuit is reduced. The modular design also makes it easier to maintain and replace defective components.
Property | IGBT Modules |
---|---|
Function | Switch for highcurrentapplications |
Control | Gate voltage; easy control |
Switching behaviour | Short switching times |
Use | Motor control, inverters |
Power loss | Low switching losses |
Other | Complex semiconductor components that combine the properties of MOSFETs and bipolar transistors; high currents, low forward voltages. |
Parameters for the technical
design of IGBT modules
- Rated voltage (Vces) / reverse voltage : The maximum voltage that the module can tolerate without being damaged.
- Rated current (Ic) : The maximum current that the module can carry under certain operating conditions.
- Switching frequency : The maximum frequency at which the module can be switched without causing excessive losses.
- Thermal properties : This includes the heatresistancevalues and the maximum operatingtemperature of the module.
- Duty cycle : The ratio of the onswitchingtime to the periodduration in a periodic signal.
- Gate emitter voltage : The voltage required to switch the IGBT on and off.
- Short-circuit resistance : The ability of the module to withstand high currents for a short time during a short-circuit.
- Diode Forward voltage and forward current of the integrated freewheeling diode.
Each individual parameter directly influences the performance and reliability of the IGBT module and must be individually designed for each application. Our CAPCOMP experts will advise you in detail. We recommend IGBTs from our partner company NAINA.
Datasheets
Dokumenttyp | Hersteller | Bezeichnung | Datei |
Datasheet | NAINA | IGBT Module, 1200V/100A | NSM100GB12AT |
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Datasheet | NAINA | IGBT Module, 1200V/75A | NSM75GB12AT |
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Datasheet | NAINA | IGBT Module, 650V/75A | NSM75GB07AT |
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