IGBT Modules
Bipolar transistor with insulated gate electrode

In modern power electronics, IGBTs (insulated gate bipolar tran­sistor modules) play a central role as discrete compo­nents wherever efficient switching and control of high electrical currents and voltages is required. With their three connections - emitter, collector and gate - they offer the advan­tages of both MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and bipolar transistors.

Great importance of IGBTs for high efficiency requirements

Thanks to their high switching speed, low power losses and robust design, IGBTs are considered indis­pen­sable in a wide range of applications - from the auto­motive industry and renewable energy systems to indus­trial drives and house­hold appliances.

• Inverters for electric drives
• 3-phase motor controls
• Battery charging systems
• Resonant circuits (e.g. induction cooker)
• Solar and wind power systems
• Electroplating, welding equipment
• UPS etc.

Discrete IGBTs vs IGBT modules

While discrete IGBTs are sufficient in many standard appli­cations, complex and powerful systems often require greater inte­gration and reliability. This is where IGBT modules come into play. These modules combine several IGBTs and often also free­wheeling diodes in a single housing that has been specially developed for optimised heat dissi­pation and mecha­nical stability. By integrating several components in one module, the overall dimen­sions can be reduced, relia­bility increased and assembly simplified.

The most important advantages of IGBT modules

• Improved heat dissipation: By sharing a heat sink and opti­mising the arran­ge­ment of the components, IGBT modules can dissi­pate heat more efficiently, resulting in greater relia­bility and power density.
• Increased reliability: The integrated circuit and the use of high­quality materials reduce the risk of faults caused by external influences such as mecha­nical vibra­tions or electro­magne­tic inter­ference.
• Simplified assembly and maintenance: By combining several components in one module, the assembly time is shortened and the comple­xity of the circuit is reduced. The modular design also makes it easier to main­tain and replace defec­tive components.
  
  

Property	IGBT Modules
Function	Switch for high­current­applications
Control	Gate voltage; easy control
Switching behaviour	Short switching times
Use	Motor control, inverters
Power loss	Low switching losses
Other	Complex semiconductor components that combine the properties of MOSFETs and bipolar transistors; high currents, low forward voltages.

Parameters for the technical
design of IGBT modules

1. Rated voltage (Vces) / reverse voltage : The maximum voltage that the module can tolerate without being damaged.
2. Rated current (Ic) : The maximum current that the module can carry under certain operating conditions.
3. Switching frequency : The maximum frequency at which the module can be switched without causing excessive losses.
4. Thermal properties : This includes the heat­resistance­values and the maxi­mum operating­temperature of the module.
5. Duty cycle : The ratio of the on­switching­time to the period­duration in a perio­dic signal.
6. Gate emitter voltage : The voltage required to switch the IGBT on and off.
7. Short-circuit resistance : The ability of the module to with­stand high currents for a short time during a short-circuit.
8. Diode Forward voltage and forward ­current of the inte­grated freewheeling diode.

Each individual parameter directly influences the performance and reliability of the IGBT module and must be indivi­dually designed for each appli­cation. Our CAPCOMP experts will advise you in detail. We recommend IGBTs from our partner company NAINA.

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